MT3S113TU 2009-12-01 1 toshiba transistor silicon-germanium npn epitaxial planar type MT3S113TU vhf-uhf band low-noise, low-disto rtion amplifier applications features ? low noise figure:nf=1.15db(typ.) (@ f=1ghz) ? high gain:|s21e| 2 =12.5db(typ.) (@ f=1ghz) marking absolute maximum ratings (ta = 25c) characteristics symbol rating unit collector-emitter voltage v ces 13 v collector-emitter voltage v ceo 5.3 v emitter-base voltage v ebo 0.6 v collector-current i c 100 ma base-current i b 10 ma collector power dissipation p c (note1) 900 mw junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c note1:the device is mounted on a cerami c board (25.4 mm x 25.4 mm x 0.8 mm (t)) note2: using continuously under heavy loads (e.g. the applic ation of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/v oltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and indi vidual reliability data (i.e. reliability test report and estimated failure rate, etc). unit: mm ufm jedec - jeita - toshiba 2-2u1b weight : 6.6mg (typ.) -0.05 1.70.1 2.10.1 0.650.05 1 2 2.00.1 3 0.70.05 +0.1 0.3 0.1660.05 1. ?` 2. ?? 3. ? r 7 1 2 3 1. base 2. emitter 3. collector
MT3S113TU 2009-12-01 2 microwave characteristics (ta = 25c) characteristics symbol test condition min typ. max unit transition frequency f t v ce =5v,i c =50ma 9 11.2 ? ghz |s21e| 2 (1) v ce =5v,i c =50ma,f=500mhz ? 18 ? db insertion gain |s21e| 2 (2) v ce =5v,i c =50ma,f=1ghz 10.5 12.5 ? db nf(1) v ce =5v,i c =50ma,f=500mhz ? 0.88 ? db noise figure nf(2) v ce =5v,i c =50ma,f=1ghz ? 1.15 1.45 db 3 rd order intermodulation distortion output intercept point oip3 v ce =5v,i c =50ma,f=500mhz, S f=1mhz 30.5 34.8 ? dbmw electrical character istics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb =5v,i e =0 ? ? 0.1 a dc current gain h fe v ce =5v,i c =30ma 200 ? 400 ? output capacitance c ob v cb =5v,i e =0, f=1mhz ? 1.49 ? pf reverse transfer capacitance c re v cb =5v,i e =0, f=1mhz (note3) ? 0.94 1.25 pf note 3:c re is measured using a 3-terminal method with capacitance bridge caution: this device is sensitive to electrostatic discharge d ue to applied the high frequency transistor process of f t =60ghz class is used for this product. please make enough tool and equipment earthed when you handle.
MT3S113TU 2009-12-01 3 h fe -i c i c -v be dc current gain hfe 10 100 1000 1 10 100 common emitter ta=25c vce=5v vce=3v collector-current i c (ma) 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 common e mitter vce=5v ta=25c collector-current i c (ma) base-emitter voltage v be (v) i c -v ce f t -i c collector-current i c (ma) 0 10 20 30 40 50 60 70 80 90 100 0123456 common emitter ta= 25c ib=520ua 120 a 200 a 280 a 360 a 440 a 40 a transition frequency f t (ghz) 0 2 4 6 8 10 12 14 1 10 100 vce=5v ta=25c collector-emitter voltage v ce (v) collector-current i c (ma) c re ,c ob -v cb |s 21e | 2 -f reverse transfer capacitance c re (pf) output capacitance c ob (pf) insertion gain |s 21e | 2 (db) 0 10 20 30 40 0.1 1 10 ic=50ma ta= 25c 3v 5v collector-base voltage v cb (v) frequency f (ghz) 0 0.4 0.8 1.2 1.6 2 2.4 0.1 1 10 ie=0 f=1mhz ta=25c cob cre
MT3S113TU 2009-12-01 4 |s 21e | 2 -i c nf-i c insertion gain |s 21e | 2 (db) 0 2 4 6 8 10 12 14 16 18 20 1 10 100 vce=3v ta=25c f = 1ghz f = 500mhz noise figure nf(db) 0.0 0.5 1.0 1.5 2.0 2.5 1 10 100 vce=3v ta=25c f = 500mhz f = 1ghz collector-current i c (ma) collector-current i c (ma) |s 21e | 2 -i c nf-i c insertion gain |s 21e | 2 (db) 0 2 4 6 8 10 12 14 16 18 20 1 10 100 vce=4v ta=25c f = 1ghz f = 500mhz noise figure nf(db) 0.0 0.5 1.0 1.5 2.0 2.5 1 10 100 vce=4v ta=25c f = 500mhz f = 1ghz collector-current i c (ma) collector-current i c (ma) |s 21e | 2 -i c nf-i c insertion gain |s 21e | 2 (db) 0 2 4 6 8 10 12 14 16 18 20 1 10 100 vce=5v ta=25c f = 1ghz f = 500mhz noise figure nf(db) 0.0 0.5 1.0 1.5 2.0 2.5 1 10 100 vce=5v ta=25c f = 500mhz f = 1ghz collector-current i c (ma) collector-current i c (ma)
MT3S113TU 2009-12-01 5 im3/p out -p in oip 3 -i c third order intermodulation distortion im3(dbmw) output level p out (dbmw) -70 -60 -50 -40 -30 -20 -10 0 10 20 30 -50 -40 -30 -20 -10 0 10 20 f1=500mhz f2=501mhz vce=3v ic=50ma ta=25c po u t im3 third order intermodulation distortion out p ut interce p t p oint oip 3 ( dbmw ) 10 15 20 25 30 35 1 10 100 f1=500mhz f2=501mhz pin=-15dbmw vc e=3 v ta=25c input level p in (dbmw) collector-current i c (ma) im3/p out -p in oip 3 -i c third order intermodulation distortion im3(dbmw) output level p out (dbmw) -70 -60 -50 -40 -30 -20 -10 0 10 20 30 -50 -40 -30 -20 -10 0 10 20 f1=500mhz f2=501mhz vce=4v ic=50ma ta=25c po u t im3 third order intermodulation distortion output intercept point oip 3 (dbmw) 10 15 20 25 30 35 110100 f 1=500mhz f 2=501mhz pin=-15dbm w vce=4v ta=25 c input level p in (dbmw) collector-current i c (ma) im3/p out -p in oip 3 -i c third order intermodulation distortion im3(dbmw) output level p out (dbmw) -70 -60 -50 -40 -30 -20 -10 0 10 20 30 -50 -40 -30 -20 -10 0 10 20 f1=500mhz f2=501mhz vce=5v ic=50ma ta=25c po u t im3 third order intermodulation distortion output intercept point oip 3 (dbmw) 10 15 20 25 30 35 40 110100 f 1=500mhz f 2=501mhz pin=-15dbm w vce=5v ta=25 c input level p in (dbmw) collector-current i c (ma)
MT3S113TU 2009-12-01 6 S p out -p out g p -p in Sp out -2 -1.5 -1 -0.5 0 0.5 1 -10 0 10 20 f=500mhz ic=50m a ta=25c 3v 4v 5v g p (db) 12 13 14 15 16 17 18 19 20 -30 -20 -10 0 10 f=500mhz ic=50m a ta=25c 3v4v5v output level p out (dbmw) input level p in (dbmw) p c -t a collector power dissipation p c (mw) 0 100 200 300 400 500 600 700 800 900 1000 0 25 50 75 100 125 150 the device is mounted on a ceramic- board(25.4mm25.4mm0.8mm(t)) device only ambient temperature t a ( c )
MT3S113TU 2009-12-01 7 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively ?toshiba?), reserve the right to make changes to the in formation in this document, and related hardware, software and systems (collectively ?product?) without notice. ? this document and any information herein may not be reproduced wi thout prior written permission from toshiba. even with toshib a?s written permission, reproduction is permissible only if reproduction is without alteration/omission. ? though toshiba works continually to improve product?s quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. befo re customers use the product, create designs including the produc t, or incorporate the product into their own applications, customers must also refer to and comply with (a) the latest versions of al l relevant toshiba information, including without limitation, this document, the specifications, the data sheets and application notes for product and the precautions and conditions set forth in the ?toshiba se miconductor reliability handbook? a nd (b) the instructions for t he application with which the product will be used with or for. custom ers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the approp riateness of the use of this product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, a lgorithms, sample application circuits, or any other referenced documents; and (c) validating all operating pa rameters for such designs an d applications. toshiba assumes no liability for customers? product design or applications. ? product is intended for use in general el ectronics applications (e.g., computers, personal equipment, office equipment, measur ing equipment, industrial robots and home electroni cs appliances) or for specif ic applications as expre ssly stated in this document . product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or re liability and/or a malfunction or failure of which may cause loss of hum an life, bodily injury, serious property damage or serious public impact (?unintended use?). unintended use includes, without limitation, equipment used in nuclear facilities, equipment used in the ae rospace industry, medical equipment, equipment used for automobiles, tr ains, ships and other transportation, traffic signaling equipmen t, equipment used to control combustions or ex plosions, safety devices, elevators and esca lators, devices related to electric powe r, and equipment used in finance-related fields. do not use product for unintended use unle ss specifically permitted in this document. ? do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy product, whether in whole or in part. ? product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. ? the information contained herein is pres ented only as guidance for product use. no re sponsibility is assumed by toshiba for an y infringement of patents or any other intellectual property rights of third parties that may result from the use of product. no license to any intellectual property right is granted by this document, w hethe r express or implied, by estoppel or otherwise. ? absent a written signed agreement, except as provid ed in the relevant terms and conditions of sale for product, and to the maximum extent allowable by law, toshiba (1) assumes no liability whatsoever, including without limitation, indirect, consequential, special, or incidental damages or loss, including without limitation, loss of profits, loss of opportunities, busin ess interruption and loss of data, and (2) disclaims any and all express or implied warranties and conditions related to sale, use of product, or information, including warranties or conditio ns of merchantability, fitness for a particular purpose, accuracy of information, or noninfringement. ? do not use or otherwise make available product or related so ftware or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technolog y products (mass destruction weapons). product and related softwa re and technology may be controlled under the japanese foreign exchange and foreign trade law and the u.s. export administration regulations. export and re-export of product or related softw are or technology are strictly prohibited except in comp liance with all applicable ex port laws and regulations. ? please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of pro duct. please use product in compliance with all applicable laws and regula tions that regulate the inclusion or use of controlled subs tances, including without limitation, the eu rohs directive. toshiba assumes no liability for damages or losses occurring as a result o f noncompliance with applicable laws and regulations.
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